Photo-Current Enhancement in the Cu/rGO/n Cu2O Photo-Electrode at Electrolyte Interface

A simple method was found to fabricate Cu/rGO/n-Cu2O photo electrode to enhance the photocurrent with compared to the device Cu/n-Cu2O photo-electrode at semiconductor-electrolyte interface. Reduced graphene oxide (rGO) was fabricated on a well cleaned copper sheet using electrophoretic deposition (EPD) technique to fabricate Cu/rGO. Thereafter Cu/rGO electrode was boiled in a 104M CuSO4 solution to fabricate Cu/rGO/n-Cu2O photo-electrode for the first time. Here The rGO acts as a good electron acceptor ton Cu2O photo-generated electrons enhancing the charge separation process suppressing the recombination process of the photo generated charge carriers.