Abstract For advanced low power electronics (in µW) and high frequency communication (100 Hz to 10 MHz), this paper emphasizes the significance of material selection and geometry optimization in TFT design thorough simulation based evaluation for two high dielectric oxides materials namely Titanium Oxide (TiO₂) and Tungsten Oxide (WO₃) for Thin Film Transistors (TFTs). A comparative analysis of the electrical behaviour for various geometries (W/L ratios) using MATLAB is done. The simulation framework extracts essential performance characteristics such as transconductance (gm), voltage gain, power consumption, latency, and Figure of Merit (FOM). Also thorough comparison of transfer, output, static, and dynamic characteristics is done to enhance the analysis. From the results we conclude that high performance communication circuits for RF/5G transceiver circuits and high speed digital switches Titanium Oxide (TiO₂) TFTs are ideal due to their improved gain (up to 17 dB), higher transconductance (70.8 µS) and faster switching (delay as low as 7.06 ns). On the other side for energy constrained applications at low frequency such as battery powered sensors, biosensors and wearable electronics Tungsten Oxide (WO₃) TFTs are ideal due to their very low power consumption (<1 µW) and larger latency (139 ns).